# [Free] IIT JAM Physics Test Series 2023 : Solid State Physics – (Semiconductor)

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Now In this Post of IIT JAM Physics Test Series, you will get a test of the topic Semiconductor of Chapter Solid State Physics. There are total 15 Questions given below also Answers are attached at the end of the test so that you can verify your answers after completing the test. So, Practice these Questions and Do your Best. Also Solve IIT JAM Physics Previous Year Question Paper. And Don’t Forget to Share with Your Friends.

## [Free] IIT JAM Physics Test Series 2023 : Solid State Physics – (Semiconductor)

Q1. Consider a doped semiconductor having the electron and the hole mobilities μ and μ’ , respectively. Its intrinsic carrier density is n. The hole concentration p for which the conductivity is minimum at a given temperature

• (A) n √(μ’/μ)
• (B) n √(μ/μ’)
• (C) n (μ/μ’)
• (D) n (μ’/μ)

Q2. In experiment, the resistance of a rectangular slab of a semiconductor is measured as a function of temperature. The semiconductor shows a resistance of 300Ω at 200K and 2Ω at 250 K. Its energy band gap is [Given: ln(15)=2.708, ln(10)=2.303]

• (A) 0.138 eV
• (B) 0.431 eV
• (C) 0.690 eV
• (D) 0.862 eV

Q3. In a p-n junction, dopant concentration on the p-side is higher than that on the n-side. Which of the following statement(s) is incorrect, when the junction is unbiased?

• (A) The width of the depletion layer is larger on the n-side
• (B) In the depletion region, number of negative charges per unit area on the p-side is equal to number of positive charges per unit area on the n-side
• (C) At thermal equilibrium the Fermi energy is higher on the p-side
• (D) The value of the built-in potential barrier depends on the dopant concentration

Q4. For a pure germanium semiconductor cooled in liquid nitrogen, the average density of conduction electrons is about n = 1012 per cm3. At this temperature the electron and hole mobilities are equal and have the common value 5.0 × 10 cm2/V/s . If a potential of 100V is applied across a 1 cm3 of this cooled germanium sample, the current observed can be estimated as

• (A) 80 μA
• (B) 160 mA
• (C) 16 mA
• (D) 16 A

Q5. An electron makes a transition from the valence band to the conduction band in an indirect band gap semiconductor. Which of the following is NOT true ?

• (A) The energy of the electron increases
• (B) A photon is absorbed in the process
• (C) A phonon is involved in the process
• (D) There is no momentum change in the electron

Q6. The net charge of an n-type semiconductor is

• (A) positive
• (B) dependent on the dopant density
• (C) zero
• (D) negative

Q7. In intrinsic germanium at room temperature the numbers of

• (A) electrons are more than holes
• (B) holes are more than electrons
• (C) electrons and holes are equal
• (D) there are no holes and electrons

Q8. Indicate the false statement about the semiconductors

• (A) all intrinsic semiconductors are insulators at T = 0°K
• (B) at very high temperature all semiconductors become intrinsic semiconductors
• (C) the conductivity of all semiconductors always increases with temperature
• (D) N-type semiconductors are obtained by doping arsenic into silicon

Q9. Energy band gap size for semiconductors is in the ranges

• (A) 1-2 eV
• (B) 2-3 eV
• (C) 3-4 eV
• (D) greater than 4 eV

Q10. According to Hall effect if a conducting materials is placed in a uniform magnetic field and a currant is passed, voltage is found to develop at:

• (A) parallel to the current
• (B) parallel to the magnetic field
• (C) perpendicular to the magnetic field and current
• (D) 45 degrees to the magnetic field and current

Q11. Indicate the false statement about the semiconductors

• (A) All intrinsic semiconductors are insulators at T=0°K
• (B) At very high temperature all semiconductors become intrinsic semiconductors
• (C) The conductivity of all semiconductors always increases with temperature
• (D) N-type semiconductors are obtained by doping phosphorus into silicon

Q12. The Fermi level in an n-type semiconductor at 0 °K

• (A) lies below the donor level
• (B) lies in the conduction band
• (C) lies half-way between the conduction band and donor level
• (D) coincides with the intrinsic Fermi level

Q13. A silicon sample is uniformly doped with 1016 phosphorus atoms/cm3 and 2×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is

• (A) n-type with carrier concentration of 3 x 10/cm3
• (B) p-type with carrier concentration of 1016 /cm3
• (C) p-type with carrier concentration of 4 x 1016/cm
• (D) intrinsic

Q14. A silicon wafer of thickness 200 μm is doped with 1023 phosphorus atoms per m3 . If the sample is kept in a field of 0.2 Weber/m2 and a current of 1 mA is passed through the sample, the Hall voltage produced is

• (A) -6.25 μV
• (B) 6.25 μV
• (C) -62.5 μV
• (D) 62.5 μV

Q15. The energy gap of Indium (In) which starts superconducting at 3.4 K is

• (A) 2.07 μeV
• (B) 2.07 meV
• (C) 1.035 μeV
• (D) 1.035 meV

Hope you like the test given above for IIT JAM Physics 2023 of Topic – Semiconductor of the Chapter Solid State Physics . To get more Information about any exam, Previous Question Papers , Study Material, Book PDF, Notes etc for free, do share the post with your friends and Follow and Join us on other Platforms links are given below to get more interesting information, materials like this.

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