Transistor ELECTRONICS MCQs with answers for IIT JAM 2022

Transistor ELECTRONICS MCQ Questions  |  Transistor ELECTRONICS MCQ for competitive exams |  ELECTRONICS quiz question | Electronics Practice test | Engineering  Electronics MCQ Questions and answers pdf | Electronics questions and answers | iit jam Physics mcq

Here is a compilation of Free  Transistor ELECTRONICS MCQs  for practice . It  consists of IIT JAM Physics Multiple Choice Questions from the topic Transistor with Answer Key. These questions can be very useful for the preparation of all the competitive examinations in Physics / Physical Sciences such as IIT JAM, BHU, JNU, DU, HCU and other University M.Sc Entrance Examinations . So, HERE you can test yourself.

Transistor ELECTRONICS MCQs with answers 2022 for IIT JAM, BHU, JNU, DU, HCU and other University M.Sc Entrance Examinations

Transistor ELECTRONICS MCQs with answers 2022 for IIT JAM, BHU, JNU, DU, HCU and other University M.Sc Entrance Examinations

We have compiled the Transistor ELECTRONICS MCQs with answers 2022 for the Candidates / Students who are preparing for IIT JAM, CSIR JRF NET, GATE and other University M.Sc & Ph.D Entrance Examinations. Practice  Transistor MCQ (Multiple Choice Questions) with Answers which is very important for students who want to score good marks in their respective examinations.

There are some Transistor ELECTRONICS MCQs with answers given  below So , attempt these  MCQs and test yourself ….

1. If the common base current amplification factor α is 0.98, its common emitter current amplification factor β is

(a) 100
(b) 98
(c) 50
(d) 49

Answer

Answer: (d)


2. CE amplifier is used in intermediate stages in a multistage amplifier because

(a) its voltage gain is high
(b) its current gain is high
(c) its current gain as well as voltage gain in high
(d) its output impedance is very low

Answer

Answer: (c)


3. A transistor having α = 0.975 and reverse saturation current I∞  = 10 μA is operated in CE configuration. If the base current is 250 μА, then the collector current is

(a) 10.15 mA
(b) 9.75 mA
(c) 11.64 mA
(d) 8.56 mA

Answer

Answer: (a)


4. In a common emitter amplifier, the voltage gain depends mainly on

(a) hfe and hre
(b) hfe and hie
(c) hfe and hoe
(d) hre and hie

Answer

Answer: (b)


5. A multistage amplifier consists of three stages. The voltage gains of the stages are 30, 50 and 80 respectively. The overall voltage gain in dB will be

(a) 101.58
(b) 50.79
(c) 33.98
(d) 38.06

Answer

Answer: (a)


6. The hybrid parameter h21, in case of transistor is known as

(a) input impedance with output shorted
(b) output admittance with input open
(c) forward current gain with output shorted
(d) reverse voltage gain with input open

Answer

Answer: (c)


7. Indicate the false statement about the consequences of early effect in transistor

(a) α decreases with increasing |VCB|
(b) IB, decreases with increasing |VCB|
(C) IE increases with increasing |VCB|
(d) voltage breakdown may occur in transistor for large |VCB|

Answer

Answer: (a)


8. When operated in cut off and saturation, the transistor acts like a:

(a) a linear amplifier
(b) a switch
(c) a variable capacitor
(d) a variable resistor

Answer

Answer: (b)


9. Transistor is a:

(a) voltage controlled device
(b) current controlled device
(c) both voltage and current controlled device
(d) neither voltage nor current controlled device

Answer

Answer: (b)


10. When transistor is operating is active region, collector junction is :

(a) reversed biased for non transistor only
(b) reversed biased for pnp transistor only
(c) forward biased for both npn and pnp transistor
(d) reversed biased for both npn and pnp transistor

Answer

Answer: (d)


11. The transistor amplifier has highest input impedance in :

(a) CB configuration
(b) CE configuration
(c) CC configuration
(d) both in CC and CE configuration

Answer

Answer: (b)


12. Why does the collector current increases with increasing collector to base reverse bias voltage VEB for constant forward bias emitter base voltage VCB in common base configurations ?

(a) It is due to increase in effective base width
(b) It is due to decrease in concentration gradient of minority carriers in base region
(c) It is due to decrease in effective base width and increase in concentration gradient of minority carriers in base region
(d) It is due to increase in effective base width and decrease in concentration gradient of minority carriers in base region

Answer

Answer: (c)


13. For a given Ge transistor, the common base current gain is 0.98 and the reverse saturation current is 50 μA, then the collector current will be

(a) 2.45 mA
(b) 2.40 mA
(c) 2.50 mA
(d) 2.55 mA

Answer

Answer: (c)


14. Indicate the false statement about the common collector transistor amplifier


(a) Its input impedance is very high
(b) Its output impedance is very low
(c) Its voltage gain is slightly less than 1
(d) Its voltage gain is slightly more than 1

Answer

Answer: (c)


15. On increasing the value of bypass capacitor in RC coupled CE amplifier its

(a) voltage gain increases but lower cutoff frequency decreases
(b) voltage gain as well as lower cutoff frequency decreases
(c) voltage gain as well as lower cutoff frequency increases
(d) voltage gain decreases but lower cutoff frequency increases

Answer

Answer: (b)


16. Compared to a CB amplifier, the CE amplifier has

(a) Lower input resistance
(b) higher output resistance
(c) Lower current amplification
(d) Higher current amplification

Answer

Answer: (b)


17. The maximum efficiency of an npn BJT amplifier is about π/4 under the:

(a) Class A configuration
(b) Class B push-pull configuration
(c) Class C tuned configuration
(d) Class AB configuration

Answer

Answer: (c)


18. Role of the resistance (RE) connected with the Emitter of an NPN transistor in the CE amplifier circuit is

(a) to fix the Q point at the center of the load line
(b) to increase the bandwidth of the amplifier
(c) to provide a path to the ac signal to ground
(d) to provide a negative feedback for dc bias stabilization

Answer

Answer: (b)


19. An electronic device exhibiting a negative resistance characteristic is the

(a) Zener diode
(b) UT
(c) JFET
(d) BJT

Answer

Answer: (b)


20. The threshold voltage VT is negative for

(a) an n-channel enhancement MOSFET
(b) an n-channel  depletion MOSFET
(c) a p-channel depletion MOSFET
(d) all active unipolar devices

Answer

Answer: (b)


Hope the information shed above regarding Transistor ELECTRONICS MCQs with answers 2022 for IIT JAM, BHU, JNU, DU, HCU and other University M.Sc Entrance Examinations  . If you have any other queries , feel free to reach us so that we can revert back to us at the earliest possible.

And if any answer is wrong then feel free to correct us 🤗.

These are some RECOMMENDED  Best Books for your preparation , Buy  from below the hard copy at  the affordable prices : –

q? encoding=UTF8&MarketPlace=IN&ASIN=B018BDVSRG&ServiceVersion=20070822&ID=AsinImage&WS=1&Format= SL250 &tag=examflame08 21

Advantages of practicing MCQs QUESTIONS

  • By  practicing  the Questions from any practice book  or online HERE or  last years questions Papers,  you’ll  be  able  to understand  the  Syllabus  and  Pattern of the respective exam.
  • By solving the Problems / Questions, you’ll find an idea about the questions that what kind of questions were asked and what kind of questions can be asked.
  • Also By continuous practicing of  the  Problems , you’ll be able to  rectify your sharpness, accuracy, capacity  and  also time management skills.

IMPORTANT SEARCHES AND TAGS

  • Transistor multiple Choice questions
  • Transistor MCQ for IIT jam pdf DOWNLOAD
  • Electronics mcq questions
  • Electronics MCQ Questions PDF
  • Electronics MCQ for competitive exams
  • Electronics MCQs with answers PDF
  • Electronics MCQ book
  • Electronics quiz
  • Iit jam physics study material
  • Iit JAM PHYSICS mcq

Leave a Comment

close